Researchers from Bar-Ilan University in Israel and Yale University in the U.S have reported on a novel device architecture comprising graphene Schottky diode varactors. The team assessed that such devices have great potential for optoelectronics applications.
The team has shown that graphene varactor diodes exhibit significant advantages compared with existing graphene photodetectors, including elimination of high dark currents and enhancement of the external quantum efficiency (EQE).
The researchers’ devices reportedly demonstrated a large photoconductive gain and EQE of up to 37%, fast photoresponse, and low leakage currents at room temperature. Read more here.
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The National Graphene Association is the main organization and body in the U.S. advocating and promoting the commercialization of graphene. NGA is focused on addressing critical issues such as policy and standards development that will result in effective integration of graphene and graphene-based materials globally. NGA brings together current and future graphene stakeholders — entrepreneurs, companies, researchers, developers and suppliers, investors, venture capitalists, and government agencies — to drive innovation, and to promote and facilitate the commercialization of graphene products and technologies. Join NGA here.